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november 2009 doc id 13206 rev 3 1/14 14 STD100N3LF3 n-channel 30 v, 0.0045 ? , 80 a, dpak planar stripfet? ii power mosfet features 100% avalanche tested logic level threshold applications switching application ? automotive description this stripfet? ii power mosfet technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. figure 1. internal schematic diagram type v dsss r ds(on) i d pw STD100N3LF3 30 v <0.0055 ? 80 a (1) 1. current limited by package 110 w 1 3 dpak !-v $4!"or ' 3 table 1. device summary order codes marking package packaging STD100N3LF3 100n3lf3 dpak tape and reel www.st.com
contents STD100N3LF3 2/14 doc id 13206 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD100N3LF3 electrical ratings doc id 13206 rev 3 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c =100 c 70 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w derating factor 0.73 w/c dv/dt (3) 3. i sd 80a, di/dt 360 a/s, v ds v (br)dss , t j t jmax peak diode recovery voltage slope 3.9 v/ns t stg storage temperature -55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case max 1.36 c/w r thja thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c table 4. avalanche characteristics symbol parameter value unit i ar not-repetitive avalanche current (pulse width limited by t j max) 40 a e as single pulsed avalanche energy (starting t j = 25 c, i d = i av, v dd = 24 v) 500 mj
electrical characteristics STD100N3LF3 4/14 doc id 13206 rev 3 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test cond itions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a v gs = 5 v, i d = 20 a 0.0045 0.008 0.0055 0.01 ? ? v gs = 10 v, i d = 40 a @125 c v gs = 5 v, i d = 20 a @125 c 0.0068 0.0146 ? ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 10 v , i d = 15 a - 31 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 2060 728 67 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24 v, i d = 80 a v gs = 5 v figure 16 on page 9 - 20 7 7.5 27 nc nc nc r g gate input resistance f = 1 mhz gate dc bias = 0 test signal level = 20 mv open drain -1.9 ?
STD100N3LF3 electrical characteristics doc id 13206 rev 3 5/14 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15 v, i d = 40 a, r g =4.7 ?, v gs =10 v figure 15 on page 9 - 9 205 31 35 - ns ns ns ns table 8. source drain diode symbol parameter test co nditions min typ. max unit i sd source-drain current - 80 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 320 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 25 v, t j = 150 c figure 17 on page 9 - 40 40 2 ns c a
electrical characteristics STD100N3LF3 6/14 doc id 13206 rev 3 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance
STD100N3LF3 electrical characteristics doc id 13206 rev 3 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized bv dss vs temperature figure 12. normalized on resistance vs temperature figure 13. source-drain diode forward characteristics
electrical characteristics STD100N3LF3 8/14 doc id 13206 rev 3 the previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: p d(ave) = 0.5 * (1.3 * bv dss *i av ) e as(ar) = p d(ave) * t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche figure 14. allowable iav vs time in avalanche
STD100N3LF3 test circuits doc id 13206 rev 3 9/14 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times
package mechanical data STD100N3LF3 10/14 doc id 13206 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STD100N3LF3 package mechanical data doc id 13206 rev 3 11/14 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
packaging mechanical data STD100N3LF3 12/14 doc id 13206 rev 3 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
STD100N3LF3 revision history doc id 13206 rev 3 13/14 6 revision history table 9. document revision history date revision changes 07-feb-2006 1 initial release. 07-may-2009 2 added v gs(th) max value in table 5: on/off states 09-nov-2009 3 added v gs parameter in table 2: absolute maximum ratings
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